MTP1N50E Datasheet - Motorola

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MTP1N50E TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N50.

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Datasheet Details

Part number:

MTP1N50E

Manufacturer:

Motorola

File Size:

159.27 KB

Description:

TMOS POWER FET

Features

* resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 500 450 400 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 1000 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 100 Ciss

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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MTP1N50E TMOS POWER FET Motorola

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