MTP1N50E Datasheet (Motorola)

MTP1N50E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N50E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and com

MTP1N50E Features

* resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 500 450 400 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 1000 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 100 Ciss