Part number:
MTP1N50E
Manufacturer:
Motorola
File Size:
159.27 KB
Description:
Tmos power fet.
MTP1N50E Features
* resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 500 450 400 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 1000 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 100 Ciss
MTP1N50E Datasheet (159.27 KB)
Datasheet Details
MTP1N50E
Motorola
159.27 KB
Tmos power fet.
📁 Related Datasheet
MTP1N100 Power MOSFET (Motorola)
MTP1N100E Power Field Effect Transistor (ON Semiconductor)
MTP1N100E TMOS POWER FET (Motorola)
MTP1N60E TMOS POWER FET (Motorola)
MTP1N80E TMOS POWER FET (Motorola)
MTP1N95 Power MOSFET (Motorola)
MTP10-B7F55 Thermopile Sensor (MemsFrontier)
MTP1013C3 -20V P-CHANNEL MOSFET (CYStech Electronics)
MTP1N50E Distributor