* resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 500 450 400 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 1000 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 100 Ciss
MTP1N50E Datasheet (159.27 KB)
MTP1N50E
Motorola
159.27 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N50.
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