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MTP1N50E - TMOS POWER FET

MTP1N50E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N50.

MTP1N50E Features

* resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 500 450 400 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 1000 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 100 Ciss

MTP1N50E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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Datasheet Details

Part number
MTP1N50E
Manufacturer
Motorola
File Size
159.27 KB
Datasheet
MTP1N50E_Motorola.pdf
Description
TMOS POWER FET

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