Datasheet Specifications
- Part number
- MTP1N50E
- Manufacturer
- Motorola
- File Size
- 159.27 KB
- Datasheet
- MTP1N50E_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N50E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N50.
Features
* resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 500 450 400 C, CAPACITANCE (pF) VDS = 0 V VGS = 0 V TJ = 25°C 1000 VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) 100 CissApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTP1N50E Distributors
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