Datasheet Specifications
- Part number
- MTP1N80E
- Manufacturer
- Motorola
- File Size
- 221.10 KB
- Datasheet
- MTP1N80E_Motorola.pdf
- Description
- TMOS POWER FET
Description
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N80E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N80.
Features
* load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 700 600 C, CAPACITANCE (pF) 500 400 300 200 Coss 100 0 Crss 0 5 10 15 Ciss TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) 1000 TJ = 25°C VGS = 0 Ciss 100 Coss 10 Crss 20 25 1 10 100 VDApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.MTP1N80E Distributors
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