MTP1N80E Datasheet (Motorola)

MTP1N80E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N80E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N80E Motorola Preferred Device N Channel Enhancement Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage blocking capability without degrading performance over time.

In addition, this advanced TMOS E FET is designed to withstand high energy in the avalanche and com

MTP1N80E Features

* load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 700 600 C, CAPACITANCE (pF) 500 400 300 200 Coss 100 0 Crss 0 5 10 15 Ciss TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) 1000 TJ = 25°C VGS = 0 Ciss 100 Coss 10 Crss 20 25 1 10 100 VD