* load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 700 600 C, CAPACITANCE (pF) 500 400 300 200 Coss 100 0 Crss 0 5 10 15 Ciss TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) 1000 TJ = 25°C VGS = 0 Ciss 100 Coss 10 Crss 20 25 1 10 100 VD
MTP1N80E Datasheet (221.10 KB)
MTP1N80E
Motorola
221.10 KB
Tmos power fet.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N80E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N80.
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