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MTP1N80E - TMOS POWER FET

MTP1N80E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP1N80E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP1N80.

MTP1N80E Features

* load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 700 600 C, CAPACITANCE (pF) 500 400 300 200 Coss 100 0 Crss 0 5 10 15 Ciss TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) 1000 TJ = 25°C VGS = 0 Ciss 100 Coss 10 Crss 20 25 1 10 100 VD

MTP1N80E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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Datasheet Details

Part number
MTP1N80E
Manufacturer
Motorola
File Size
221.10 KB
Datasheet
MTP1N80E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
Motorola MTP1N80E-like datasheet