MTP10N10E Datasheet - Motorola

MTP10N10E TMOS POWER FETs

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10E/D TMOS IV Power Field Effect Transistor This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation modes. These new energy efficient devices also offer drain to source diodes with fast recovery times. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particu.

MTP10N10E Features

* during trr as the diode goes from conduction to reverse blocking. VDS(pk) is the peak drain

* to

* source voltage that the device must sustain during commutation; IFM is the maximum forward source-drain diode current just prior to the onset of commutation. VR is specified at 80% of V(BR

MTP10N10E_Motorola.pdf

MTP10N10E Datasheet Preview — Preview of MTP10N10E PDF

Datasheet Details

Part number:

MTP10N10E

Manufacturer:

Motorola

File Size:

237.95 KB

Description:

Tmos power fets.

MTP10N10E Distributor

📁 Related Datasheet

MTP10N10EL MTP10N10 MTP10N10M MTP10N15 MTP10N05 MTP10N06

📌 All Tags

MTP10N10E TMOS POWER FETs Motorola