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MTP10N10E TMOS POWER FETs

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Description

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10E/D TMOS IV Power Field Effect Transistor This advanced ā€œEā€ series .

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Datasheet Specifications

Part number
MTP10N10E
Manufacturer
Motorola
File Size
237.95 KB
Datasheet
MTP10N10E_Motorola.pdf
Description
TMOS POWER FETs

Features

* during trr as the diode goes from conduction to reverse blocking. VDS(pk) is the peak drain
* to
* source voltage that the device must sustain during commutation; IFM is the maximum forward source-drain diode current just prior to the onset of commutation. VR is specified at 80% of V(BR

Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients.
* Internal Source
* to

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