MTP10N10E - TMOS POWER FETs

Product Overview

Motorola

Part number	MTP10N10E
Manufacturer	Motorola
File Size	237.95 KB
Description	TMOS POWER FETs
Datasheet	MTP10N10E Datasheet
Additional preview pages of the MTP10N10E datasheet.

during trr as the diode goes from conduction to reverse blocking. VDS(pk) is the peak drain.
to.
source voltage that the device must sustain during commutation; IFM is the maximum forward source-drain diode current just prior to the onset of commutation. VR is specified at 80% of V(BR)DSS to ensure that the CSOA stress is maximized as IS decays from IRM to zero. RGS should be minimized during commutation. TJ has only a second order effect on CSOA. Stray inductances in Motorola’s t.

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Published: Dec 19, 2005 |