Datasheet Details
- Part number
- MTP10N10E
- Manufacturer
- Motorola
- File Size
- 237.95 KB
- Datasheet
- MTP10N10E_Motorola.pdf
- Description
- TMOS POWER FETs
MTP10N10E Description
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10E/D TMOS IV Power Field Effect Transistor This advanced “E” series .
MTP10N10E Features
* during trr as the diode goes from conduction to reverse blocking. VDS(pk) is the peak drain
* to
* source voltage that the device must sustain during commutation; IFM is the maximum forward source-drain diode current just prior to the onset of commutation. VR is specified at 80% of V(BR
MTP10N10E Applications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients.
* Internal Source
* to
📁 Related Datasheet
📌 All Tags