Part number:
MTP10N10E
Manufacturer:
Motorola
File Size:
237.95 KB
Description:
Tmos power fets
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onsemi | MTP10N10ELG | MOSFET N-CH 100V 10A TO220AB | DigiKey | 0 | 0 |
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MTP10N10E Datasheet (237.95 KB)
MTP10N10E
Motorola
237.95 KB
Tmos power fets
* during trr as the diode goes from conduction to reverse blocking. VDS(pk) is the peak drain
* to
* source voltage that the device must sustain during commutation; IFM is the maximum forward source-drain diode current just prior to the onset of commutation. VR is specified at 80% of V(BR
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onsemi
|
MTP10N10E |
Bristol Electronics |
3750 In Stock |
Unit Price : $0
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Motorola Semiconductor Products
|
MTP10N10E |
TRANSISTOR,MOSFET,N-CHANNEL,100V V(BR)DSS,10A I(D),TO-220AB
|
Quest Components |
159 In Stock |
Qty : 120 units |
Unit Price : $1.94
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