Datasheet Specifications
- Part number
- MTP10N10E
- Manufacturer
- Motorola
- File Size
- 237.95 KB
- Datasheet
- MTP10N10E_Motorola.pdf
- Description
- TMOS POWER FETs
Description
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10E/D TMOS IV Power Field Effect Transistor This advanced āEā series .Features
* during trr as the diode goes from conduction to reverse blocking. VDS(pk) is the peak drainApplications
* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical, and offer additional safety margin against unexpected voltage transients.MTP10N10E Distributors
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