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MTP10N10EL - TMOS POWER FET

MTP10N10EL Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N10EL/D ™ Data Sheet Logic Level TMOS E-FET.™ Power Field Effect Transistor Desig.

MTP10N10EL Features

* CAPACITANCE (pF) 1200 1000 800 600 400 200 0 10 VDS = 0 V VGS = 0 V TJ = 25°C Crss Ciss Coss Crss 0 5 10 15 20 25 VGS VDS GATE
* TO
* SOURCE OR DRAIN
* TO
* SOURCE VOLTAGE (VOLTS) 5 Figure 7. Capacitance Variation 4 Motorola TMOS Power MOSFET Transistor Device Data

MTP10N10EL Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Specified

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Datasheet Details

Part number
MTP10N10EL
Manufacturer
Motorola
File Size
221.37 KB
Datasheet
MTP10N10EL_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
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