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MTP10N40E TMOS POWER FET

MTP10N40E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP10N40E TMOS.

MTP10N40E Features

* th commutation speed, so tfrr is specified with a minimum value. Faster commutation speeds require an appropriate derating of IFM, peak VR or both. Ultimately, tfrr is limited primarily by device, package, and circuit impedances. Maximum device stress occurs during trr as the diode goes from conduct

MTP10N40E Applications

* such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
* Avalanche Energy Capability

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Datasheet Details

Part number
MTP10N40E
Manufacturer
Motorola
File Size
249.40 KB
Datasheet
MTP10N40E_Motorola.pdf
Description
TMOS POWER FET

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TMOS POWER FET Motorola
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