MTP10N40E Datasheet (Motorola)

MTP10N40E, TMOS POWER FET

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP10N40E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP10N40E TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS N Channel Enhancement Mode Silicon Gate This advanced high voltage TMOS E FET is designed to withstand high energy in the avalanche mode and switch efficiently.

This new high energy device also offers a drain to source diode with fast recovery time.

Designe

MTP10N40E Features

* th commutation speed, so tfrr is specified with a minimum value. Faster commutation speeds require an appropriate derating of IFM, peak VR or both. Ultimately, tfrr is limited primarily by device, package, and circuit impedances. Maximum device stress occurs during trr as the diode goes from conduct