Datasheet4U Logo Datasheet4U.com

MTP3N50E N-Channel MOSFET

MTP3N50E Description

isc N-Channel MOSFET Transistor *.

MTP3N50E Features

* With TO-220 packaging
* High speed switching
* Very high commutation ruggedness
* Easy to use
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

MTP3N50E Applications

* PFC stages
* Popular AC-DC applications
* Power supply
* Switching applications INCHANGE Semiconductor MTP3N50E
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous Drain Current-Si

📥 Download Datasheet

Preview of MTP3N50E PDF
datasheet Preview Page 2

Datasheet Details

Part number
MTP3N50E
Manufacturer
INCHANGE
File Size
199.88 KB
Datasheet
MTP3N50E-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • MTP3N50 - Power Field Effect Transistor (Motorola)
  • MTP3N55 - High Voltage Power MOSFET (STI)
  • MTP3N100 - Power MOSFET (Motorola)
  • MTP3N100E - TMOS POWER FET 3.0 AMPERES 1000 VOLTS (Motorola)
  • MTP3N120E - TMOS POWER FET 3.0 AMPERES 1000 VOLTS (Motorola)
  • MTP3N25E - TMOS POWER FET 3.0 AMPERES 250 VOLTS (Motorola)
  • MTP3N35 - N-Channel Power MOSFETs (Fairchild Semiconductor)
  • MTP3N60 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS (ST Microelectronics)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE MTP3N50E-like datasheet