Datasheet4U Logo Datasheet4U.com

MTP3N50E

N-Channel MOSFET

MTP3N50E Features

* With TO-220 packaging

* High speed switching

* Very high commutation ruggedness

* Easy to use

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation

* APPLICATIONS

* PFC stages

* Popular AC-DC applications

* Power

MTP3N50E Datasheet (199.88 KB)

Preview of MTP3N50E PDF

Datasheet Details

Part number:

MTP3N50E

Manufacturer:

INCHANGE

File Size:

199.88 KB

Description:

N-channel mosfet.

📁 Related Datasheet

MTP3N50 - Power Field Effect Transistor (Motorola)
.

MTP3N50E - TMOS POWER FET (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N50E/D ™ Data Sheet TMOS E-FET.™ High Energy Power FET Designer's MTP3N50E Motoro.

MTP3N50E - TMOS E-FET (ON Semiconductor)
MTP3N50E Designer’s™ Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is de.

MTP3N55 - High Voltage Power MOSFET (STI)
PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://w.

MTP3N55 - Power Field Effect Transistor (Motorola)
.

MTP3N100 - Power MOSFET (Motorola)
.

MTP3N100E - TMOS POWER FET 3.0 AMPERES 1000 VOLTS (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N100E/D Designer's .. TMOS E-FET .™ Power Field Effect Transist.

MTP3N120E - TMOS POWER FET 3.0 AMPERES 1000 VOLTS (Motorola)
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP3N120E/D Designer's Data Sheet .. TMOS E-FET .™ Power Field Effe.

TAGS

MTP3N50E N-Channel MOSFET INCHANGE

Image Gallery

MTP3N50E Datasheet Preview Page 2

MTP3N50E Distributor