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MTP4N80E TMOS POWER FET 4.0 AMPERES 800 VOLTS

MTP4N80E Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ Power Field Effect Transistor N *Channel Enhancement *Mode Silicon Gat.

MTP4N80E Features

* evable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 28

MTP4N80E Applications

* in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
* Robust High Voltage Termination

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Datasheet Details

Part number
MTP4N80E
Manufacturer
Motorola
File Size
154.49 KB
Datasheet
MTP4N80E_Motorola.pdf
Description
TMOS POWER FET 4.0 AMPERES 800 VOLTS

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TMOS POWER FET 4.0 AMPERES 800 VOLTS Motorola
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