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MTP4N80E - TMOS POWER FET 4.0 AMPERES 800 VOLTS

Features

  • evable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2800 Ciss 2400 VDS = 0 V VGS = 0 V TJ = 25°C 10000 VGS = 0 V Ciss 1000 C,.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's TMOS E-FET .™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time.
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