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MTV16N50E Datasheet TMOS POWER FET 16 AMPERES 500 VOLTS

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTV16N50E/D Advance Information TMOS E-FET .

Key Features

  • obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. VDS = 0 V VGS = 0 V TJ = 25°C 10000 VGS = 0 V TJ = 25°C Ciss Coss 100 C.