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Motorola Electronic Components Datasheet

MV2101 Datasheet

Silicon Tuning Diode

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Tuning Diodes
These devices are designed in the popular PLASTIC PACKAGE for high volume
requirements of FM Radio and TV tuning and AFC, general frequency control and
tuning applications.They provide solid–state reliability in replacement of mechanical
tuning methods. Also available in Surface Mount Package up to 33pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance 10%
Complete Typical Design Curves
31
Cathode
Anode
SOT–23
21
Cathode
Anode
TO–92
MAXIMUM RATINGS
Rating
Symbol MV21xx MMBV21xxLT1 Unit
Reverse Voltage
Forward Current
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR 30
IF 200
PD
280
2.8
225
1.8
Vdc
mAdc
mW
mW/°C
Junction Temperature
Storage Temperature Range
DEVICE MARKING
TJ
Tstg
+150
–55 to +150
°C
°C
MMBV2101LT1 = M4G
MMBV2103LT1 = 4H
MMBV2105LT1 = 4U
MMBV2107LT1 = 4W
MMBV2108LT1 = 4X
MMBV2109LT1 = 4J
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Reverse Breakdown Voltage
(IR = 10 µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
V(BR)R
IR
TCC
30
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2105 MV2108
MV2109 MV2111
MV2115
6.8–100 pF
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
1
2
CASE 182–02, STYLE 1
TO–92 (TO–226AC)
Typ Max Unit
— — Vdc
— 0.1 µAdc
280 — ppm/°C
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5–135


Motorola Electronic Components Datasheet

MV2101 Datasheet

Silicon Tuning Diode

No Preview Available !

MMBV2101LT1 MMBV2103LT1 MMBV2105LT1 MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
CT, Diode Capacitance
VR = 4.0 Vdc, f = 1.0 MHz
pF
Q, Figure of Merit
VR = 4.0 Vdc,
f = 50 MHz
TR, Tuning Ratio
C2/C30
f = 1.0 MHz
Device
Min Nom Max Typ Min Typ Max
MMBV2101LT1/MV2101
MMBV2103LT1
MV2104
MMBV2105LT1/MV2105
MMBV2107LT1
MMBV2108LT1/MV2108
MMBV2109LT1/MV2109
6.1 6.8 7.5
9.0 10
11
10.8 12 13.2
13.5 15 16.5
19.8 22 24.2
24.3 27 29.7
29.7 33 36.3
450
400
400
400
350
300
200
2.5 2.7 3.2
2.5 2.9 3.2
2.5 2.9 3.2
2.5 2.9 3.2
2.5 2.9 3.2
2.5 3.0 3.2
2.5 3.0 3.2
MV2111
MV2115
42.3 47 51.7
90 100 110
150
100
2.5 3.0 3.2
2.6 3.0 3.3
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk. Use the device title and drop
the ”T1” suffix when ordering any of these devices in bulk.
PARAMETER TEST METHODS
1. CT, DIODE CAPACITANCE
(CT = CC + CJ). CT is measured at 1.0 MHz using a ca-
pacitance bridge (Boonton Electronics Model 75A or
equivalent).
2. TR, TUNING RATIO
TR is the ratio of CT measured at 2.0 Vdc divided by CT
measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an ad-
mittance bridge at the specified frequency and substitut-
ing in the following equations:
+Q
2pfC
G
[(Boonton Electronics Model 33AS8 or equivalent). Use
Lead Length 1/16”.
4. TCC, DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR = 4.0 Vdc,
f = 1.0 MHz, TA = –65°C with CT at VR = 4.0 Vdc, f =
1.0 MHz, TA = +85°C in the following equation, which de-
fines TCC:
+ Ť ) ) ŤTCC CT(
85°C) – CT(–65°C)
85 65
·
106
CT(25°C)
Accuracy limited by measurement of CT to ± 0.1 pF.
5–136
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number MV2101
Description Silicon Tuning Diode
Maker Motorola
Total Page 3 Pages
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