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MW4IC915GNBR1 - RF LDMOS Wideband Integrated Power Amplifiers

Description

22 mF, 35 V Tantalum Chip Capacitors 1000 pF Chip Capacitors 22 pF Chip Capacitors 10 pF Chip Capacitors 10 mF Tantalum Chip Capacitor 12.5 nH Inductor 0.283″, 90_ Mitered Microstrip Bends 10 kΩ, 1/4 W Chip Resistor (1206) Part Number TAJE226M035R 100B102JCA500X 100B220JCA500X 100B100JCA500X T491X22

Features

  • C16 R4 R2 R7 P2 C1 MW4IC915MB Rev 0 C8 VGG GROUND Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 6. MW4IC915NBR1(MBR1)(GNBR1)(GMBR1) Reference Board Component Layout MW4IC915NBR1 MW4IC915GNBR1 MW4IC915MBR.

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MW4IC915GMBR1 RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi−stage structure. Its wideband On−Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N−CDMA and W−CDMA.
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