• Part: MW4IC915GNBR1
  • Description: RF LDMOS Wideband Integrated Power Amplifiers
  • Manufacturer: Motorola Semiconductor
  • Size: 369.58 KB
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Datasheet Summary

.. Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi- stage structure. Its wideband On- Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N- CDMA and W- CDMA. Final Application - Typical Performance: VDD = 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, Pout = 15 Watts CW, Full Frequency Band (860- 960 MHz) Power Gain - 30 dB...