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MW4IC915MBR1 - RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS

Download the MW4IC915MBR1 datasheet PDF. This datasheet also covers the MW4IC915GMBR1 variant, as both devices belong to the same rf ldmos wideband integrated power amplifiers family and are provided as variant models within a single manufacturer datasheet.

Description

22 mF, 35 V Tantalum Chip Capacitors, AVX #TAJE226M035R 1000 pF Chip Capacitors, B Case, ATC #100B102JCA500X 22 pF Chip Capacitors, B Case, ATC #100B220JCA500X 10 pF Chip Capacitors, B Case, ATC #100B100JCA500X 10 mF Tantalum Chip Capacitor, Kemet #T491X226K035AS4394 10 kΩ, 1/4 W Chip Resistor (1206

Features

  • ut = 6 W (PEP) IDQ1 = 90 mA, IDQ2 = 240 mA Two-Tone Measurement 100 kHz Tone Spacing 0 -7 -14 -21 -28 -35 -42 -49 -56 -63 -70 960 -20.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MW4IC915GMBR1_Motorola.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription

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www.DataSheet4U.com MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW4IC915/D RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Motorola’s newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its wideband On Chip design makes it usable from 750 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA. • Typical GSM/GSM EDGE Performances: 26 Volts, IDQ1 = 60 mA, IDQ2 = 240 mA, 869-894 MHz and 921-960 MHz Output Power — 3 Watts Avg.
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