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Motorola Electronic Components Datasheet

VN0610LL Datasheet

TMOS FET Transistor

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TMOS FET Transistor
N–Channel — Enhancement
3DRAIN VN0610LL
2
GATE
MAXIMUM RATINGS
®
1 SOURCE
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage (RGS = 1 M)
Gate – Source Voltage
– Continuous
– Non–repetitive (tp 50 µs)
Drain Current
Continuous
Pulsed
Total Power Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VDGR
VGS
VGSM
ID
IDM
PD
60
60
± 20
± 40
190
1000
400
3.2
Vdc
Vdc
Vdc
Vpk
mAdc
mW
mW/°C
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
TJ, Tstg – 55 to +150
°C
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering
Purposes, 1/16” from case for 10 seconds
RθJA
TL
312.5
300
°C/W
°C
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain – Source Breakdown Voltage
(VGS = 0, ID = 100 µA)
V(BR)DSS
Zero Gate Voltage Drain Current
(VDS = 48 Vdc, VGS = 0)
(VDS = 48 Vdc, VGS = 0, TJ = 125°C)
Gate–Body Leakage Current, Forward
(VGSF = 30 V, VDS = 0)
ON CHARACTERISTICS(1)
IDSS
IGSSF
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)
Static Drain–Source On–Resistance
(VGS = 10 V, ID = 500 mA)
(VGS = 10 V, ID = 500 mA, TC = 125°C)
Drain–Source On–Voltage
(VGS = 5.0 V, ID = 200 mA)
(VGS = 10 V, ID = 500 mA)
On–State Drain Current (VGS = 10 V, VDS 2.0 VDS(on))
Forward Transconductance (VDS 2.0 VDS(on), ID = 500 mA)
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.
VGS(th)
rDS(on)
VDS(on)
ID(on)
gfs
1
2
3
CASE 29–04, STYLE 22
TO–92 (TO–226AA)
Min Max Unit
60 — Vdc
µAdc
— 10
— 500
–100
nAdc
0.8 2.5 Vdc
— 5.0
— 9.0
Vdc
— 1.5
— 2.5
750 — mAdc
100 — µmhos
REV 1
4–98
Motorola Small–Signal Transistors, FETs and Diodes Device Data


Motorola Electronic Components Datasheet

VN0610LL Datasheet

TMOS FET Transistor

No Preview Available !

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS(1)
(VDS = 25 Vdc, VGS = 0,
f = 1.0 MHz)
Ciss
Coss
Crss
Turn–On Delay Time
Turn–Off Delay Time
(VDD = 15 Vdc, ID = 600 mA,
Rgen = 25 , RL = 23 )
v v1. Pulse Test: Pulse Width 300 ms, Duty Cycle 10%.
ton
toff
Min
VN0610LL
Max Unit
60 pF
25
5.0
10 ns
10
Motorola Small–Signal Transistors, FETs and Diodes Device Data
4–99


Part Number VN0610LL
Description TMOS FET Transistor
Maker Motorola
Total Page 3 Pages
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