VN0610LL Datasheet and Specifications PDF

VN0610LL FET Transistor N−Channel — Enhancement MAXIMUM RATINGS Rating Drain −Source Voltage Drain −Gate Voltage (RGS = 1 MΩ) Gate −Source Voltage − Continuous − Non−repetitive (tp ≤ 50 μs) Drain Cu.

age (VGS = 0, ID = 100 μA) Zero Gate Voltage Drain Current (VDS = 48 Vdc, VGS = 0) (VDS = 48 Vdc, VGS = 0, TJ = 125°C) Gate
*Body Leakage Current, Forward (VGSF = 30 V, VDS = 0) ON CHARACTERISTICS(1) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) Static Drain
*Source On
*Resistance (VGS = 10 V, ID = .

VN0610LL, VN10LM N-Channel Enhancement-Mode MOS Transistors VN0610LL / VN10LM FEATURES CORPORATION • Low rDS(on) <5Ω • Switching • Amplification PIN CONNECTIONS ORDERING INFORM.

CORPORATION
* Low rDS(on) <5Ω
* Switching
* Amplification PIN CONNECTIONS ORDERING INFORMATION Part Package Temperature Range -55oC to +150oC -55oC to +150oC VN0610LL Plastic TO-92 VN10LM Plastic TO-237 For sorted chips in carriers see 2N7000 APPLICATIONS BOTTOM VIEW BOTTOM VIEW 3 TO-92 (TO-.

VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number VN10LLS VN0605T VN0610LL VN2222LL V(BR)DSS Min (V) 60 rDS(on) Max (W) 5 @ VGS = 10 V .

BENEFITS D Low On-Resistance: 2.5 W D Low Threshold: <2.1 V D Low Input Capacitance: 22 pF D Fast Switching Speed: 7 ns D Low Input and Output Leakage D Low Offset Voltage D Low-Voltage Operation D Easily Driven Without Buffering D High-Speed Circuits D Low Error Voltage APPLICATIONS D Direct Lo.

MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement 3DRAIN VN0610LL 2 GATE MAXIMUM RATINGS ® 1 SOURCE Rating Symbol Value Unit Drain – Source Voltage Drain – Gat.

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