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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TMOS FET Transistor
N–Channel — Enhancement
3DRAIN VN0610LL
2 GATE
MAXIMUM RATINGS
®
1 SOURCE
Rating
Symbol
Value
Unit
Drain – Source Voltage
Drain – Gate Voltage (RGS = 1 MΩ)
Gate – Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs)
Drain Current Continuous Pulsed
Total Power Dissipation @ TA = 25°C Derate above 25°C
VDSS VDGR
VGS VGSM
ID IDM PD
60 60
± 20 ± 40
190 1000 400 3.2
Vdc Vdc
Vdc Vpk mAdc
mW mW/°C
Operating and Storage Temperature Range THERMAL CHARACTERISTICS
TJ, Tstg – 55 to +150
°C
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/16” from case for 10 seconds
RθJA TL
312.
VN0610LL Datasheet
