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Motorola Electronic Components Datasheet

VN10LM Datasheet

TMOS FET Transistor

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
TMOS FET Transistor
N–Channel — Enhancement
3 DRAIN
2
GATE
1 SOURCE
Order this document
by VN10LM/D
VN10LM
1
23
CASE 29–05, STYLE 22
TO–92 (TO–226AE)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain – Source Voltage
Gate–Source Voltage
— Continuous
— Non–repetitive (tp 50 µs)
Drain Current – Continuous(1)
– Pulsed(2)
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VDSS
VGS
VGSM
ID
IDM
PD
60 Vdc
± 20 Vdc
± 40 Vpk
0.3 Adc
1.0
1.0 Watts
8.0 mW/°C
Operating and Storage
Temperature Range
TJ, Tstg
– 40 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 µA)
Zero–Gate–Voltage Drain Current
(VDS = 45 V, VGS = 0)
Gate–Body Leakage Current
(VGS = –15 V, VDS = 0)
Gate–Body Leakage Current
(VGS = 15 V, VDS = 0)
V(BR)DSS
IDSS
IGSS1
IGSS2
v1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Width 300 µs, Duty Cycle.
Min
60
Typ Max Unit
— — Vdc
0.1 10 µAdc
— 100 nAdc
–100
nAdc
TMOS is a registered trademark of Motorola, Inc.
REV 1
©MMotootorroollaa,
Small–Signal
Inc. 1997
Transistors,
FETs
and
Diodes
Device
Data
1


Motorola Electronic Components Datasheet

VN10LM Datasheet

TMOS FET Transistor

No Preview Available !

VN10LM
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max Unit
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mA)
VGS(th)
0.8
2.5 Vdc
On–State Drain Current
(VDS = 15 V, VGS = 10 V)
ID(on)
750
— mA
Forward Transconductance
(VDS = 15 V, ID = 500 mA)
Drain–Source On–Voltage
(VGS = 5.0 V, ID = 200 mA)
Drain–Source On–Voltage
(VGS = 10 V, ID = 500 mA)
Drain–Source On–Resistance
(VGS = 5.0 V, ID = 200 mA)
Drain–Source On–Resistance
(VGS = 10 V, ID = 500 mA)
gfs 200 — — mmhos
VDS(on)1
— 1.5 Vdc
VDS(on)2
— 2.5 Vdc
rDS(on)1
— 7.5
rDS(on)2
— 5.0
Input Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Ciss — — 60 pF
Output Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Coss
25 pF
Reverse Transfer Capacitance
(VDS = 25 V, VGS = 0, f = 1.0 MHz)
Crss
— 5.0 pF
Turn–On Time
(VDS = 15 V, RL = 23 , RG = 50 , Vin = 20 V)
ton — — 10 ns
Turn–Off Time
(VDS = 15 V, RL = 23 , RG = 50 , Vin = 20 V)
toff — — 10 ns
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data


Part Number VN10LM
Description TMOS FET Transistor
Maker Motorola
Total Page 4 Pages
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