BCW69LT1 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW69LT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE BCW69LT1 BCW70LT1 3 1 2 EMITTER MAXIMUM RATINGS Rating Collector- Emitter Voltage Emitter- Base Voltage Collector Current - Continuous Symbol VCEO VEBO IC Value - 45 - 5.0 - 100 Unit Vdc Vdc m Adc CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) DEVICE MARKING BCW69LT1 = H1; BCW70LT1 = H2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ, Tstg 417 - 55 to +150 Unit m W m W/°C °C/W m W m W/°C °C/W °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector- Emitter Breakdown Voltage (IC = - 2.0 m Adc, IB = 0) Collector- Emitter Breakdown Voltage (IC = - 100 µAdc, VEB = 0) Emitter- Base Breakdown Voltage (IE = - 10 µAdc, IC = 0) Collector Cutoff Current (VCB...