BCW69LT1 Datasheet - ON Semiconductor

BCW69LT1 General Purpose Transistors

BCW69LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol VCEO VEBO IC Value .

BCW69LT1 Features

* l stress to which the devices are subjected.

* Always preheat the device.

* The delta temperature between the preheat and soldering should be 100°C or less.

* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature

BCW69LT1-ONSemiconductor.pdf