BCW30LT1 Datasheet - ON Semiconductor

BCW30LT1 General Purpose Transistors(PNP Silicon)

BCW30LT1 General Purpose Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 32 32 5.0 100 Unit Vdc Vdc Vdc mAdc 1 BASE COLLECTOR 3 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissip.

BCW30LT1 Features

* to which the devices are subjected.

* Always preheat the device.

* The delta temperature between the preheat and soldering should be 100°C or less.

* When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings

BCW30LT1_ONSemiconductor.pdf