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BCW30LT1 - General Purpose Transistors

Key Features

  • the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT.
  • 23 package, PD can be calculated as follows: PD = TJ(max).
  • TA RθJA.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BCW29LT1/D General Purpose Transistors PNP Silicon COLLECTOR 3 1 BASE 2 EMITTER BCW29LT1 BCW30LT1 3 1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Symbol VCEO VCBO VEBO IC Value –32 –32 –5.0 –100 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.