BCW30LT1 - General Purpose Transistors(PNP Silicon)

onsemi

Key Features

to which the devices are subjected.
Always preheat the device.
The delta temperature between the preheat and soldering should be 100°C or less.
When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.
The soldering temperature and time shall not exceed.

BCW30LT1 general purpose transistors(pnp silicon) by onsemi - Datasheet Preview

Datasheet Details

Part number	BCW30LT1
Manufacturer	onsemi
File Size	345.27 KB
Description	General Purpose Transistors(PNP Silicon)
Datasheet	BCW30LT1 Datasheet

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BCW30LT1 General Purpose Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC Value –32 –32 –5.0 –100 Unit Vdc Vdc Vdc mAdc 1 BASE COLLECTOR 3 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature (1) FR– 5 = 1.0 0.75 (2) Alumina = 0.4 0.3 Symbol PD 225 1.8 RθJA PD 556 300 2.