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BCW72LT1G, SBCW72LT1G
General Purpose Transistor
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Collector −Emitter Voltage
Symbol VCEO
Value 45
Unit Vdc
Collector −Base Voltage Emitter−Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
VCBO VEBO
IC
50 Vdc 5.0 Vdc 100 mAdc
Characteristic
Total Device Dissipation FR−5 Board, (Note 1) TA = 25°C Derate above 25°C
Symbol PD
Max
225 1.8
Unit
mW mW/°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C
RqJA PD
556 °C/W
300 mW 2.
BCW72LT1G Datasheet
