Continental Device India BCW72
SILICON PLANAR EPITAXIAL TRANSISTORS
| Part No. | BCW72 |
|---|---|
| Datasheet | BCW72 Download |
| Manufacturer |  Continental Device India |
| Description | SILICON PLANAR EPITAXIAL TRANSISTORS |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
D.C. current gain at Tj = 25 °C IC = 2 mA; VCE = 5 V Collector–base voltage (open emitter) Collector–emitter voltage (open base) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Junction temperature Transition frequency at f = 35 MHz IC = 10 mA; VCE = 5 V Noise figure at RS = 2 kΩ IC = 200 µA; VCE = 5 V; f = 1 kHz; B = 200 Hz hFE VCB0 VCE0 ICM Ptot Tj BCW71 > 110 < 220 max. max. max. max. max. BCW72 200 450 50 V 45 V 200 mA 250 mW 150 °C fT typ. 300 MHz F < 10 dB Continental Device India Limited Data Sheet Page 1 of 4 BCW71 BCW72 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) IC = 2 mA Emitter–base voltage (open collector) Collector current (d.c.) Collector current (peak value) Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tj = 25 °C unless otherw...
