DAN222 Datasheet | Motorola Semiconductor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by DAN222/D mon Cathode Silicon Dual Switching Diode This mon Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT- 416/SC- 90 package which is designed for low power surface mount applications, where board space is at a premium. - Fast trr - Low CD - Available in 8 mm Tape and Reel SOT- 416/SC- 90 PACKAGE MON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT 3 2 1 CASE 463- 01, STYLE 4 SOT- 416/SC- 90 MAXIMUM RATINGS (TA = 25°C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current Symbol VR VRM IF IFM IFSM(1) Value 80 80 100 300 2.0 Unit Vdc Vdc m Adc m Adc Adc 1 ANODE 2 CATHODE 3 DEVICE MARKING DAN222 = N9 THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature Symbol PD TJ Tstg Max 150 150 - 55 ~ + 150 Unit m W °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time 1. t = 1 µS 2. trr Test Circuit on following page. Symbol IR VF VR CD trr(2) Condition VR = 70 V IF = 100 m A IR = 100 µA VR = 6.0 V, f = 1.0 MHz IF = 5.0 m A, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR Min - - 80 - - Max 0.1 1.2 - 3.5 4.0 Unit µAdc Vdc Vdc p F ns Thermal Clad is a trademark of the Bergquist pany REV 1 Motorola Small- Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 TYPICAL ELECTRICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (m A) TA = 85°C 10 TA = - 40°C IR , REVERSE CURRENT (µA) 10 TA = 150°C 1.0 TA = 125°C TA = 85°C TA = 55°C TA =...