Datasheet Summary
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Freescale Semiconductor Technical Data
Document Number: MHL21336N Rev. 7, 8/2006
3G Band RF Linear LDMOS Amplifier
Designed for ultra- linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems.
- Third Order Intercept: 45 dBm Typ
- Power Gain: 31 dB Typ (@ f = 2140 MHz)
- Input VSWR v 1.5:1 Features
- Excellent Phase Linearity and Group Delay Characteristics
- Ideal for Feedforward Base Station Applications
- N Suffix Indicates Lead
- Free...
