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MOTOROLA
Freescale Semiconductor, Inc.
SEMICONDUCTOR TECHNICAL DATA
Order this document by MHL21336/D
The RF Line
3G Band RF Linear LDMOS Amplifier
Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems. • Third Order Intercept: 45 dBm Typ • Power Gain: 31 dB Typ (@ f = 2140 MHz) • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications
MHL21336
2110–2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER
Freescale Semiconductor, Inc...
MHL21336 Datasheet
