MHL21336 - 3G BAND RF LINEAR LDMOS AMPLIFIER

Motorola Semiconductor (now NXP Semiconductors)

Datasheet Details

Part number	MHL21336
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	318.44 KB
Description	3G BAND RF LINEAR LDMOS AMPLIFIER
Datasheet	MHL21336 Datasheet

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MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHL21336/D The RF Line 3G Band RF Linear LDMOS Amplifier Designed for ultra–linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems. • Third Order Intercept: 45 dBm Typ • Power Gain: 31 dB Typ (@ f = 2140 MHz) • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications MHL21336 2110–2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER Freescale Semiconductor, Inc...