MHL21336N Description
Freescale Semiconductor Technical Data Document Number: 7, 8/2006 3G Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain.
MHL21336N Key Features
- Excellent Phase Linearity and Group Delay Characteristics
- Ideal for Feedforward Base Station