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Freescale Semiconductor Technical Data
Document Number: MHL21336N Rev. 7, 8/2006
3G Band RF Linear LDMOS Amplifier
Designed for ultra- linear amplifier applications in 50 ohm systems operating in the 3G frequency band. A silicon FET Class A design provides outstanding linearity and gain. In addition, the excellent group delay and phase linearity characteristics are ideal for digital CDMA modulation systems. • Third Order Intercept: 45 dBm Typ • Power Gain: 31 dB Typ (@ f = 2140 MHz) • Input VSWR v 1.5:1 Features • Excellent Phase Linearity and Group Delay Characteristics • Ideal for Feedforward Base Station Applications • N Suffix Indicates Lead - Free Terminations
MHL21336N
2110 - 2170 MHz 3.0 W, 31 dB RF LINEAR LDMOS AMPLIFIER
CASE 301AP - 02, STYLE 1
Table 1.
MHL21336N Datasheet
