Datasheet Summary
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Freescale Semiconductor Technical Data
Document Number: Order from RF Marketing Rev. 6, 10/2006
RF Power Field
- Effect Transistor
- Channel Enhancement
- Mode Lateral MOSFETs
Designed primarily for wideband large
- signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
- Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA, Pout = 150 Watts Power Gain
- 25.5 dB Drain Efficiency
- 69%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 150 Watts Output Power
- Integrated ESD Protection
- Excellent Thermal Stability
- Facilitates Manual Gain...
