MRF6V2150NR1
MRF6V2150NR1 is RF Power FET manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
RF Power Field--Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
- Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 450 mA,
Pout = 150 Watts Power Gain
- 25 dB Drain Efficiency
- 68.3%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW Output Power
Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- 225°C...
