MRF6V2150NR1 Description
Freescale Semiconductor Technical Data RF Power Field--Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical CW Performance at 220 MHz:.
MRF6V2150NR1 Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS pliant
- In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
- 0.5, +110 Vdc
- 0.5, + 12 Vdc
- 65 to +150 °C