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MRF6V10250HSR3 - RF Power Field Effect Transistor

General Description

240 pF Chip Capacitor 1.8 pF Chip Capacitors 3.3 pF Chip Capacitor 5.1 pF Chip Capacitors 39 pF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 4.7 pF Chip Capacitor 470 μF, 63 V Electrolytic Capacitors 5 nH, 2 Turn Inductor 7 nH, Hand Wound 10 Ω, 1/4 W Chip Resistor 20 Ω, 1 W Chip Resistor Part Number

Key Features

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  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6V10250HSR3 1090 MHz, 250 W, 50 V PULSED.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF6V10250HS Rev. 0, 2/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 250 mA, Pout = 250 Watts Peak, f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 10% Power Gain — 21 dB Drain Efficiency — 60% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 1090 MHz, 250 Watts Peak Power Features www.DataSheet4U.