MRF6V10250HSR3
MRF6V10250HSR3 is RF Power Field Effect Transistor manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
Document Number: MRF6V10250HS Rev. 0, 2/2008
RF Power Field Effect Transistor
- Channel Enhancement
- Mode Lateral MOSFET
RF Power transistor designed for applications operating at frequencies between 1030 and 1090 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.
- Typical Pulsed Performance: VDD = 50 Volts, IDQ = 250 mA, Pout = 250 Watts Peak, f = 1090 MHz, Pulse Width = 100 μsec, Duty Cycle = 10% Power Gain
- 21 dB Drain Efficiency
- 60%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 1090 MHz, 250 Watts Peak Power Features
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- Characterized with Series Equivalent Large
- Signal Impedance...
