Datasheet4U Logo Datasheet4U.com

MRF6V13250HSR3 - RF Power Field Effect Transistors

Download the MRF6V13250HSR3 datasheet PDF. This datasheet also covers the MRF6V13250HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

22 μF, 35 V Tantalum Capacitors 0.1 μF, 50 V Chip Capacitors 100 pF Chip Capacitors 4.7 pF Chip Capacitor 1000 pF Chip Capacitors 1000 pF Chip Capacitors 10K pF Chip Capacitors 470 μF, 63 V Electrolytic Capacitors 15 Ω, 1/4 W Chip Resistor 0.030″, εr = 3.50 Part Number T491X226K035AT CDR33BX104AKWS

Key Features

  • Characterized with Series Equivalent Large--Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Characterized from 20 V to 50 V for Extended Power Range.
  • Integrated ESD Protection.
  • Greater Negative Gate--Source Voltage Range for Improved Class C Operation.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6V13250HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF6V12500GS RF Power LDMOS Transistors NXP
MRF6V12500H RF Power LDMOS Transistors NXP
MRF6V12500HS RF Power LDMOS Transistors NXP
MRF6V14300HR3 RF Power Field Effect Transistors Motorola
MRF6V14300HR3 RF Power Field Effect Transistors NXP

Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRF6V13250HR3 RF Power Field Effect Transistors
MRF6V10250HSR3 RF Power Field Effect Transistor
MRF6V12500HR3 RF Power Field Effect Transistors
MRF6V12500HSR3 RF Power Field Effect Transistors
MRF6V2010NBR1 RF Power Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 0, 6/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at 1300 MHz. These devices are suitable for use in pulsed and CW applications. • Typical Performance: VDD = 50 Volts, IDQ = 100 mA Signal Type Pulsed (200 μsec, 10% Duty Cycle) Pout (W) 250 Peak f (MHz) 1300 Gps (dB) 22.7 ηD (%) 57.0 IRL (dB) --18 MRF6V13250HR3 MRF6V13250HSR3 1300 MHz, 250 W, 50 V LATERAL N-CHANNEL RF POWER MOSFETs • Typical Performance: VDD = 50 Volts, IDQ = 10 mA, TC = 25°C Signal Type CW Pout (W) 230 CW f (MHz) 1300 Gps (dB) 21.0 ηD (%) 55.0 IRL (dB) --17 at all Phase Angles www.DataSheet4U.