MRF6V13250HSR3
MRF6V13250HSR3 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
- Part of the MRF6V13250HR3 comparator family.
- Part of the MRF6V13250HR3 comparator family.
Freescale Semiconductor Technical Data
Document Number: MRF6V13250H Rev. 0, 6/2011
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF Power transistors designed for applications operating at 1300 MHz. These devices are suitable for use in pulsed and CW applications.
- Typical Performance: VDD = 50 Volts, IDQ = 100 mA
Signal Type Pulsed (200 μsec, 10% Duty Cycle) Pout (W) 250 Peak f (MHz) 1300 Gps (dB) 22.7 ηD (%) 57.0 IRL (dB) --18
MRF6V13250HR3 MRF6V13250HSR3
1300 MHz, 250 W, 50 V LATERAL N-CHANNEL RF POWER MOSFETs
- Typical Performance: VDD = 50 Volts, IDQ = 10 mA, TC = 25°C
Signal Type CW Pout (W) 230 CW f (MHz) 1300 Gps (dB) 21.0 ηD (%) 55.0 IRL (dB)...
