MRF6V2010NBR1
MRF6V2010NBR1 is RF Power Field Effect Transistor manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
Document Number: MRF6V2010N Rev. 1, 5/2007
RF Power Field Effect Transistor
- Channel Enhancement
- Mode Lateral MOSFETs
Designed primarily for CW large
- signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
- Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA, Pout = 10 Watts Power Gain
- 23.9 dB Drain Efficiency
- 62%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW Output Power Features
- Integrated ESD Protection
- Excellent Thermal Stability
- Facilitates Manual Gain Control, ALC and Modulation...
