MRF6V2010GN
MRF6V2010GN is RF Power FET manufactured by NXP Semiconductors.
- Part of the MRF6V2010N comparator family.
- Part of the MRF6V2010N comparator family.
NXP Semiconductors Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
- Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA,
Pout = 10 W Power gain
- 23.9 dB Drain efficiency
- 62%
- Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW output power
Features
- Characterized with series equivalent large--signal impedance parameters
- Qualified up to a maximum of 50 VDD operation
- Integrated ESD protection
- 225C capable plastic...
