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MRF6V2010GN Datasheet Rf Power Fet

Manufacturer: NXP Semiconductors

Overview: NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.  Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power gain — 23.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Characterized with series equivalent large--signal impedance parameters.
  • Qualified up to a maximum of 50 VDD operation.
  • Integrated ESD protection.
  • 225C capable plastic package Document Number: MRF6V2010N Rev. 6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10--450 MHz, 10 W, 50 V.

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