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MRF6V2010GN - RF Power FET

Download the MRF6V2010GN datasheet PDF. This datasheet also covers the MRF6V2010N variant, as both devices belong to the same rf power fet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Characterized with series equivalent large--signal impedance parameters.
  • Qualified up to a maximum of 50 VDD operation.
  • Integrated ESD protection.
  • 225C capable plastic package Document Number: MRF6V2010N Rev. 6, 9/2016 MRF6V2010N MRF6V2010NB MRF6V2010GN 10--450 MHz, 10 W, 50 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6V2010N-NXP.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MRF6V2010NBR1 RF Power Field Effect Transistor Freescale Semiconductor
MRF6V2010NR1 RF Power Field Effect Transistor Freescale Semiconductor
MRF6V2150N RF Power Field Effect Transistor Motorola Semiconductor
MRF6V2150NB RF Power Field Effect Transistor Motorola Semiconductor
MRF6V2150NBR1 RF Power FET Freescale Semiconductor

Other Datasheets by NXP Semiconductors

Part Number Description
MRF6V2010N RF Power FET
MRF6V2010NB RF Power FET
MRF6V2300NBR1 RF Power FET
MRF6V2300NR1 RF Power FET
MRF6V12500GS RF Power LDMOS Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.  Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 W Power gain — 23.9 dB Drain efficiency — 62%  Capable of handling 10:1 VSWR @ 50 Vdc, 220 MHz, 10 W CW output power Features  Characterized with series equivalent large--signal impedance parameters  Qualified up to a maximum of 50 VDD operation  Integrated ESD protection  225C capable plastic package Document Number: MRF6V2010N Rev.