MRF6V2010N Description
NXP Semiconductors Technical Data RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs Designed primarily for CW large--signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical CW performance at 220 MHz:.
MRF6V2010N Key Features
- Characterized with series equivalent large--signal impedance parameters
- Qualified up to a maximum of 50 VDD operation
- Integrated ESD protection
- 225C capable plastic package
- 0.5, +110 --0.5, +10 -- 65 to +150