MRF6V12500HSR3 Description
Freescale Semiconductor Technical Data Document Number: RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
MRF6V12500HSR3 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate
- Source Voltage Range for Improved Class C Operation
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel
- 1215 MHz, 500 W, 50 V PULSED LATERAL N