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MRF6V12500HR3 - RF Power Field Effect Transistors

General Description

5.1 pF Chip Capacitors 33 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 2.2 μF, 100 V Chip Capacitors 22 μF, 25 V Chip Capacitor 1 μF, 100 V Chip Capacitor 470 μF, 63 V Electrolytic Capacitors 56 Ω, 1/4 W Chip Resistors 0 Ω, 3 A Chip Resistors Part Number ATC100B5R1CT500XT ATC100B330JT500XT GRM55DR

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Qualified Up to a Maximum of 50 VDD Operation.
  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF6V12500HR3 MRF6V12500HSR3 965 - 1215 MHz, 500 W, 50 V PULSED.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF6V12500H Rev. 0, 9/2009 www.DataSheet4U.com RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications. • Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout = 500 Watts Peak (50 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10% Power Gain — 19.