MRF6V12500HR3
MRF6V12500HR3 is RF Power Field Effect Transistors manufactured by Freescale Semiconductor.
Freescale Semiconductor Technical Data
Document Number: MRF6V12500H Rev. 0, 9/2009
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RF Power Field Effect Transistors
- Channel Enhancement
- Mode Lateral MOSFETs
RF Power transistors designed for applications operating at frequencies between 965 and 1215 MHz. These devices are suitable for use in pulsed applications.
- Typical Pulsed Performance: VDD = 50 Volts, IDQ = 200 mA, Pout = 500 Watts Peak (50 W Avg.), f = 1030 MHz, Pulse Width = 128 μsec, Duty Cycle = 10% Power Gain
- 19.7 dB Drain Efficiency
- 62%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 1030 MHz, 500 Watts Peak Power Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
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