MRF6V13250HR3 Description
Freescale Semiconductor Technical Data Document Number: 0, 6/2011 RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs RF Power transistors designed for applications operating at 1300 MHz. These devices are suitable for use in pulsed and CW applications.
MRF6V13250HR3 Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 50 VDD Operation
- Characterized from 20 V to 50 V for Extended Power Range
- Integrated ESD Protection
- Greater Negative Gate--Source Voltage Range for Improved Class C Operation
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 12. Table