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MRF6V2300N - RF Power Field Effect Transistor

Features

  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • Excellent Thermal Stability.
  • Facilitates Manual Gain Control, ALC and Modulation Techniques.
  • 225°C Capable Plastic Package.
  • RoHS Compliant MRF6V2300N MRF6V2300NB.

📥 Download Datasheet

Datasheet Details

Part number MRF6V2300N
Manufacturer Motorola Semiconductor
File Size 350.20 KB
Description RF Power Field Effect Transistor
Datasheet download datasheet MRF6V2300N Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
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