MRF6V2300NR1
MRF6V2300NR1 is RF Power FET manufactured by NXP Semiconductors.
Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
- Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA,
Pout = 300 Watts, f = 220 MHz Power Gain
- 25.5 dB Drain Efficiency
- 68%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 300 Watts CW Output Power
Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Qualified Up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- 225°C...
