MRF6V12500GS Description
Freescale Semiconductor Technical Data RF Power LDMOS Transistors N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for applications operating at frequencies between 960 and 1215 MHz such as distance measuring equipment (DME), transponders and secondary radars for air traffic control. These devices are suitable for use in pulse applications, including Mode S ELM. Typical Pulse...
MRF6V12500GS Key Features
- Characterized with Series Equivalent Large--Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified up to a Maximum of 50 VDD Operation
- Integrated ESD Protection
- Greater Negative Gate--Source Voltage Range for Improved Class C
- 0.5, +110 --6.0, +10 -- 65 to +150
- 200 Adc
MRF6V12500GS Applications
- 0.5, +110 --6.0, +10 -- 65 to +150