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MRF6V2300NB - RF Power Field Effect Transistor

Download the MRF6V2300NB datasheet PDF. This datasheet also covers the MRF6V2300N variant, as both devices belong to the same rf power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • Integrated ESD Protection.
  • Greater Negative Gate - Source Voltage Range for Improved Class C Operation.
  • Excellent Thermal Stability.
  • Facilitates Manual Gain Control, ALC and Modulation Techniques.
  • 225°C Capable Plastic Package.
  • RoHS Compliant MRF6V2300N MRF6V2300NB.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRF6V2300N_MotorolaSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MRF6V2300NB
Manufacturer Motorola Semiconductor
File Size 350.20 KB
Description RF Power Field Effect Transistor
Datasheet download datasheet MRF6V2300NB Datasheet

📁 Similar Datasheet

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MRF6V2010N RF Power FET NXP
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Other Datasheets by Motorola Semiconductor

Part Number Description
MRF6V2300N RF Power Field Effect Transistor
MRF6V2150N RF Power Field Effect Transistor
MRF6V2150NB RF Power Field Effect Transistor
MRF6V3090NBR1 RF Power Field Effect Transistors
MRF6V3090NBR5 RF Power Field Effect Transistors

Full PDF Text Transcription

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www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: Order from RF Marketing Rev. 4, 10/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for pulsed wideband large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
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