Datasheet Summary
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Freescale Semiconductor Technical Data
Document Number: Order from RF Marketing Rev. 4, 10/2006
RF Power Field Effect Transistor
- Channel Enhancement
- Mode Lateral MOSFETs
Designed primarily for pulsed wideband large
- signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
- Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts Power Gain
- 27 dB Drain Efficiency
- 68%
- Capable of Handling 10:1 VSWR, @ 50 Vdc, 210 MHz, 300 Watts CW Output Power Features
- Integrated ESD Protection
- Greater Negative Gate
- Source Voltage...
