* 100% PAR Tested for Guaranteed Output Power Capability
* Characterized with Series Equivalent Large - Signal Impedance Parameters
* Internally Matched for Ease of Use
* Integrated ESD Protection
* Greater Negative Gate - Source Voltage Range for Improved Cla
MRF7S18170HSR3 Datasheet (520.47 KB)
MRF7S18170HSR3
Motorola Semiconductor
520.47 KB
Rf power field effect transistors.
www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Chan.
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