MRF7S18170HSR3, MRF7S18170H Datasheet - Motorola Semiconductor

MRF7S18170HSR3 RF Power Field Effect Transistors

0.8 pF Chip Capacitor 6.8 pF Chip Capacitors 100 pF Chip Capacitor 100 nF Chip Capacitor 5.6 pF Chip Capacitors 10 μF Chip Capacitors 470 μF, 63 V Electrolytic Capacitor, Radial 0.5 pF Chip Capacitor 0.2 pF Chip Capacitors 4.7 pF Chip Capacitors 2 pF Chip Capacitor 0.3 pF Chip Capacitor 10 W, 1/4 W .

www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 140.

MRF7S18170HSR3 Features

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Series Equivalent Large - Signal Impedance Parameters

* Internally Matched for Ease of Use

* Integrated ESD Protection

* Greater Negative Gate - Source Voltage Range for Improved Cla

MRF7S18170H_MotorolaSemiconductor.pdf

MRF7S18170HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF7S18170HSR3, MRF7S18170H. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF7S18170HSR3, MRF7S18170H

Manufacturer:

Motorola Semiconductor

File Size:

520.47 KB

Description:

Rf power field effect transistors.

Note:

This datasheet PDF includes multiple part numbers: MRF7S18170HSR3, MRF7S18170H.
Please refer to the document for exact specifications by model.

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MRF7S18170HSR3 MRF7S18170H Power Field Effect Transistors Motorola Semiconductor

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