Datasheet4U Logo Datasheet4U.com

MRF8S26060HR3 - RF Power Field Effect Transistors

General Description

Part Number MPZ2012S300AT000 ATC100B5R6CT500XT ATC100B0R3BT500XT C5750X7R1H106KT C5750JF1H226ZT T491X226K035AT C3225X7R2A684KT MCGPR63V227M10X21 C2012X7R2102KT CRCW120612R0FKEA CuClad 25064-0300-55-22 TDK ATC ATC TDK TDK Kemet TDK Multicomp TDK Vishay Arlon Manufacturer MRF8S26060HR3 MRF8S26060HSR3

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

📥 Download Datasheet

Datasheet Details

Part number MRF8S26060HR3
Manufacturer Motorola Semiconductor
File Size 252.83 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF8S26060HR3 Datasheet

Full PDF Text Transcription for MRF8S26060HR3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MRF8S26060HR3. For precise diagrams, and layout, please refer to the original PDF.

Freescale Semiconductor Technical Data Document Number: MRF8S26060H www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Latera...

View more extracted text
10 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2620- 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 15.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2620 MHz 2655 MHz 2690 MHz Gps (dB) 16.3 16.3 16.3 hD (%) 33.2 33.0 32.9 Output PAR (dB) 6.3 6.3 6.2 ACPR (dBc) -37.2 -37.7 -37.1 MRF8S26060HR3 MRF

More Datasheets from Motorola Semiconductor

Part Number Description
MRF8S26060HSR3 RF Power Field Effect Transistors
MRF2001 Microwave Power Transistors
MRF2001B Microwave Power Transistors
MRF2001M Microwave Power Transistors
MRF433 RF POWER TRANSISTOR
MRF475 RF Power Transistor
MRF485 The RF Line / NPN Silicon RF Power Transistor
MRF501 (MRF501 / MRF502) High Frequency Transistors
MRF502 (MRF501 / MRF502) High Frequency Transistors
MRF534 HIGH FREQUENCY TRANSISTOR