• Part: MRF8S26060HSR3
  • Description: RF Power Field Effect Transistors
  • Manufacturer: Motorola Semiconductor
  • Size: 252.83 KB
Download MRF8S26060HSR3 Datasheet PDF
MRF8S26060HSR3 page 2
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MRF8S26060HSR3 page 3
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MRF8S26060HSR3 Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and mon Source S-Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • Optimized for Doherty