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MRF8S26060HR3 - RF Power Field Effect Transistors

General Description

Part Number MPZ2012S300AT000 ATC100B5R6CT500XT ATC100B0R3BT500XT C5750X7R1H106KT C5750JF1H226ZT T491X226K035AT C3225X7R2A684KT MCGPR63V227M10X21 C2012X7R2102KT CRCW120612R0FKEA CuClad 25064-0300-55-22 TDK ATC ATC TDK TDK Kemet TDK Multicomp TDK Vishay Arlon Manufacturer MRF8S26060HR3 MRF8S26060HSR3

Key Features

  • 100% PAR Tested for Guaranteed Output Power Capability.
  • Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters.
  • Internally Matched for Ease of Use.
  • Integrated ESD Protection.
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation.
  • Designed for Digital Predistortion Error Correction Systems.
  • Optimized for Doherty.

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Datasheet Details

Part number MRF8S26060HR3
Manufacturer Motorola Semiconductor
File Size 252.83 KB
Description RF Power Field Effect Transistors
Datasheet download datasheet MRF8S26060HR3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Freescale Semiconductor Technical Data Document Number: MRF8S26060H www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2620- 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 15.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2620 MHz 2655 MHz 2690 MHz Gps (dB) 16.3 16.3 16.3 hD (%) 33.2 33.0 32.9 Output PAR (dB) 6.3 6.3 6.2 ACPR (dBc) -37.2 -37.7 -37.1 MRF8S26060HR3 MRF8S26060HSR3 2620-2690 MHz, 15.5 W AVG.