MRF8S26060HSR3, MRF8S26060HR3 - RF Power Field Effect Transistors

Motorola Semiconductor

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MRF8S26060HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF8S26060HSR3, MRF8S26060HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	MRF8S26060HSR3, MRF8S26060HR3
Manufacturer	Motorola Semiconductor
File Size	252.83 KB
Description	RF Power Field Effect Transistors
Datasheet	MRF8S26060HR3_MotorolaSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: MRF8S26060HSR3, MRF8S26060HR3. Please refer to the document for exact specifications by model.

MRF8S26060HSR3 Product details

Description

Part Number MPZ2012S300AT000 ATC100B5R6CT500XT ATC100B0R3BT500XT C5750X7R1H106KT C5750JF1H226ZT T491X226K035AT C3225X7R2A684KT MCGPR63V227M10X21 C2012X7R2102KT CRCW120612R0FKEA CuClad 25064-0300-55-22 TDK ATC ATC TDK TDK Kemet TDK Multicomp TDK Vishay Arlon Manufacturer MRF8S26060HR3 MRF8S26060HSR3 4 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS ηD VDD = 28 Vdc, Pout = 15.5 W (Avg.), IDQ = 450 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.0

Features

100% PAR Tested for Guaranteed Output Power Capability.
Characterized with Series Equivalent Large-Signal Impedance Parameters and Common Source S-Parameters.
Internally Matched for Ease of Use.
Integrated ESD Protection.
Greater Negative Gate-Source Voltage Range for Improved Class C Operation.
Designed for Digital Predistortion Error Correction Systems.
Optimized for Doherty.

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Published: Jul 1, 2010 |