MRF8S26060HSR3 - RF Power Field Effect Transistors
Motorola Semiconductor
Download the MRF8S26060HSR3 datasheet PDF.
This datasheet also covers the MRF8S26060HR3 variant, as both devices belong to the same rf power field effect transistors family and are provided as variant models within a single manufacturer datasheet.
Note: The manufacturer provides a single datasheet file (MRF8S26060HR3_MotorolaSemiconductor.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for MRF8S26060HSR3 (Reference)
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MRF8S26060HSR3. For precise diagrams, and layout, please refer to the original PDF.
Freescale Semiconductor Technical Data Document Number: MRF8S26060H www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Latera...
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10 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2620- 2690 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. • Typical Single-Carrier W-CDMA Performance: VDD = 28 Volts, IDQ = 450 mA, Pout = 15.5 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Frequency 2620 MHz 2655 MHz 2690 MHz Gps (dB) 16.3 16.3 16.3 hD (%) 33.2 33.0 32.9 Output PAR (dB) 6.3 6.3 6.2 ACPR (dBc) -37.2 -37.7 -37.1 MRF8S26060HR3 MRF
MRF8S26060HSR3 Datasheet
