MRF8P20160HSR3, MRF8P20160HR3 Datasheet - Motorola Semiconductor Products

MRF8P20160HSR3 RF Power Field Effect Transistors

10 pF Chip Capacitors 0.3 pF Chip Capacitor 1.1 pF Chip Capacitors 12 pF Chip Capacitors 10 μF, 50 V Chip Capacitors 22 μF, 35 V Tantalum Capacitors 2.0 pF Chip Capacitors 2.2 pF Chip Capacitors 220 μF, 50 V Electrolytic Capacitors 0.8 pF Chip Capacitor 50 Ω, 4 W Chip Resistor 8.25 Ω, 1/4 W Chip Res.

DataSheet.in Freescale Semiconductor Technical Data Document Number: MRF8P2160H Rev. 1, 7/2010 RF Power Field Effect Transistors N Channel Enhancement Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. Typical Doherty Single Carrier W CDMA Performance: VDD = 28 Volts, IDQA = 550 mA, VGSB = 1.6 Vdc, Pout =.

MRF8P20160HSR3 Features

* Production Tested in a Symmetrical Doherty Configuration

* 100% PAR Tested for Guaranteed Output Power Capability

* Characterized with Large

* Signal Load

* Pull Parameters and Common Source S

* Parameters

* Internally Matched for Ease of Use

MRF8P20160HSR3, MRF8P20160HR3 Datasheet

MRF8P20160HSR3 Datasheet Preview — This datasheet PDF includes multiple part numbers: MRF8P20160HSR3, MRF8P20160HR3. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

MRF8P20160HSR3, MRF8P20160HR3

Manufacturer:

Motorola Semiconductor Products

File Size:

834.56 KB

Description:

Rf power field effect transistors.

This datasheet PDF includes multiple part numbers: MRF8P20160HSR3, MRF8P20160HR3.
Please refer to the document for exact specifications by model.

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MRF8P20160HSR3 MRF8P20160HR3 Power Field Effect Transistors Motorola Semiconductor Products

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