2N1893 transistor equivalent, bipolar transistor.
high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range.
Absolute Maximum Ratings:
Collector-Base Voltage, VCBO .
This device features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide.
This is a silicon NPN transistor in a T0-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range..
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