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Bipolar Transistor
NPN
Description:
This is a silicon NPN transistor in a T0-39 type case designed primarily for amplifier and switching applications. This device features high breakdown voltage, low leakage current, low capacity, and beta useful over an extremely wide current range.
Absolute Maximum Ratings:
Collector-Base Voltage, VCBO Collector-Emitter Voltage, VCEO Emitter-Base Voltage, VEBO Continuous Collector Current, lC Total Device Dissipation (TA= +25°C), PD
Derate above 25°C
Total Device Dissipation (TC = +25°C), PD Derate above 25°C
Operating Junction Temperature Range, TJ Storage Temperature Range, Tstg Thermal Resistance, Junction-to-Case, RthJC Thermal Resistance, Junction-to-Ambient, RthJA Lead Temperature (During Soldering, 1/16" from case, 60sec Max.
2N1893 Datasheet
