Description
A PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits, and thyristor trigger circuits.
Features
- Low peak point current: 2µA (Max. ).
- Low emitter reverse current: 200nA (Max. ).
- Passivated surface for reliability and uniformity
Maximum Ratings
Characteristic
Symbol
Rating
Unit
Power Dissipation (Note 1) RMS Emitter Current Peak Pulse Emitter Current (Note 2) Emitter Reverse Voltage Interbase Voltage Operation and Storage Junction Temperature Range
PD IE(RMS)
IE VB2E VB2B1 TJ, TSTG
300 50 2 30 35 -65 to +150
mW mA A
V
°C
Notes: 1. Derate 3mW/°C increa.
2N2647-Multicomp.pdf
