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2N2647 - SILICON PN UNIJUNCTION TRANSISTORS

Download the 2N2647 datasheet PDF. This datasheet also covers the 2N2646 variant, as both devices belong to the same silicon pn unijunction transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

The CENTRAL SEMICONDUCTOR 2N2646 and 2N2647 devices are silicon PN Unijunction Transistors designed for general purpose industrial applications.

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Note: The manufacturer provides a single datasheet file (2N2646-CentralSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Central Semiconductor

Part Number Description
2N2646 SILICON PN UNIJUNCTION TRANSISTORS
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2N2646 2N2647 SILICON PN UNIJUNCTION TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2646 and 2N2647 devices are silicon PN Unijunction Transistors designed for general purpose industrial applications. MARKING: FULL PART NUMBER TO-18 (UJT) CASE MAXIMUM RATINGS: (TA=25°C) Emitter Reverse Voltage SYMBOL VB2E Interbase Voltage VB2B1 RMS Emitter Current Ie Peak Emitter Current (Duty Cycle ≤1%, PRR≤10pps) ie RMS Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg 30 35 50 2.0 300 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2646 SYMBOL TEST CONDITIONS MIN MAX VB2B1=10V 0.56 0.75 RBB VB2B1=3.0V 4.7 9.1 IEB2O VB2E=30V - 12 IV VB2B1=20V, RB2=100Ω 4.0 - IP VB2B1=25V - 5.