Datasheet4U Logo Datasheet4U.com

2N2647 - Transistor

General Description

A PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits, and thyristor trigger circuits.

Key Features

  •   Low peak point current: 2µA (Max. ).
  •   Low emitter reverse current: 200nA (Max. ).
  •   Passivated surface for reliability and uniformity Maximum Ratings Characteristic Symbol Rating Unit Power Dissipation (Note 1) RMS Emitter Current Peak Pulse Emitter Current (Note 2) Emitter Reverse Voltage Interbase Voltage Operation and Storage Junction Temperature Range PD IE(RMS) IE VB2E VB2B1 TJ, TSTG 300 50 2 30 35 -65 to +150 mW mA A V °C Notes: 1. Derate 3mW/°C increa.

📥 Download Datasheet

Datasheet Details

Part number 2N2647
Manufacturer Multicomp
File Size 334.89 KB
Description Transistor
Datasheet download datasheet 2N2647 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2N2647 Silicon PN Unijuction Transistor Boca
2N2647 (2N2646 / 2N2647) Silicon PN unijunction transistor Motorola
2N2647 (2N2646 / 2N2647) SILICON UNIJONCTION TRANSISTORS Comset
2N2647 SILICON PN UNIJUNCTION TRANSISTORS Central Semiconductor
2N2647 Silicon PN Unijunction Transistor Solid State

Other Datasheets by Multicomp

Part Number Description
2N2646 Transistor
2N2102 Transistor
2N2218A Bipolar Transistor
2N2222 Low Power Bipolar Transistors
2N2369 High Speed Switching Transistors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Transistor Unijunction 1. Emitter 2. Base 1 3. Base 2 Description: A PN Unijunction Transistor designed for use in pulse and timing circuits, sensing circuits, and thyristor trigger circuits. Features: •  Low peak point current: 2µA (Max.) •  Low emitter reverse current: 200nA (Max.) •  Passivated surface for reliability and uniformity Maximum Ratings Characteristic Symbol Rating Unit Power Dissipation (Note 1) RMS Emitter Current Peak Pulse Emitter Current (Note 2) Emitter Reverse Voltage Interbase Voltage Operation and Storage Junction Temperature Range PD IE(RMS) IE VB2E VB2B1 TJ, TSTG 300 50 2 30 35 -65 to +150 mW mA A V °C Notes: 1. Derate 3mW/°C increase in ambient temperature.